Acta Optica Sinica, Volume. 35, Issue 1, 130002(2015)

Characterization of Junction Temperature of GaN Blue LED with Optimum Spectral Bandwidth

Rao Feng1,2,3、*, Zhu Xifang1, Xu Ancheng1, Chu Jing1, and Zhang Yan1
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    The optimum approach to determine junction temperature of GaN blue light emitting diode (LED) with spectral bandwidth is studied. The normalized spectral power distribution and junction temperature of ten GaN blue LEDs is measured at different drive current and heat sink temperature. The formulae for calculating junction temperature with Dln are obtained from the least-square fitting. Difference between the values by the established method and the forward voltage method is analyzed. The optimum n, which yields the least error, is obtained. It is shown that the spectral bandwidth Dln with different n can be used to determine junction temperature, and the error initially decreases with the decreasing n, and then increases. The optimum n depends on the accuracy of spectrometer, it is 0.2 or 0.3 when Hass2000 spectrometer is used. This research is very important to improve the measurement accuracy of GaN-type LED junction temperature.

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    Rao Feng, Zhu Xifang, Xu Ancheng, Chu Jing, Zhang Yan. Characterization of Junction Temperature of GaN Blue LED with Optimum Spectral Bandwidth[J]. Acta Optica Sinica, 2015, 35(1): 130002

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    Paper Information

    Category: Spectroscopy

    Received: Jul. 1, 2014

    Accepted: --

    Published Online: Dec. 19, 2014

    The Author Email: Feng Rao (jxsdrf@aliyun.com)

    DOI:10.3788/aos201535.0130002

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