Free Electron Laser Irradiation Effects of GaAs/AlGaAs Quantum Wells

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 30, Issue 9, 852(2003)

[in Chinese]^1、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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Abstract Get PDF(in Chinese)

Photoluminescence (PL) was observed from GaAs/AlGaAs quantum wells structure excited by mid-infrared free electron laser (FEL) irradiation. The experimental results showed that the characteristic PL peak of quantum wells was shifted to longer wavelength (red shift) and the intensity was decreased much after FEL irradiation. The results are discussed and compared with that of electron irradiation.

Keywords

free electron laser irradiation photoluminescence spectra quantum well red shift laser technique

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Free Electron Laser Irradiation Effects of GaAs/AlGaAs Quantum Wells[J]. Chinese Journal of Lasers, 2003, 30(9): 852

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Paper Information

Category: laser manufacturing

Received: Mar. 29, 2002

Accepted: --

Published Online: Jun. 27, 2006

The Author Email: (zourui@hotmail.com)

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology