Infrared detection and remote sensing are the core technologies of meteorological observation. As an important payload of meteorological satellites, infrared radiation detectors are mainly used for quantitative detection of atmospheric temperature and humidity. Their detection accuracy depends on the number of spectral and polarization measurement channels. The common technical solution is to achieve spectral and polarization detection by combining filters and polarizer wheels, which leads to problems such as large system volume, high power consumption, and few channels. The development of on-chip integrated polarization spectral imaging devices is an effective method to solve the above problems. Previous studies have mainly used arraying schemes of thin film resonant cavities or resonant microstructures, but both cannot meet the requirements of spectrum and polarization selection. To solve these problems, this article proposes a new design approach based on coupling regulation of thin film microstructures, which can provide an on-chip integrated polarization spectral imaging device. An on-chip integrated polarization spectral imaging device based on thin film microstructure, which combines a subwavelength grating broadband reflector and a multi-layer high reflection film is built in this paper (Fig.1). By constructing matching conditions for phase and amplitude at the interface between multilayer films and microstructures, narrow band transmission peaks with polarization selective characteristics can be excited through the coupling of them (Fig.2). Specifically, firstly one can design a broadband high reflectivity microstructure with a central wavelength of λ₀, then design a high reflection film stack centered on λ₀, with the outermost layer being a low refractive index interlayer, next adjust the appropriate spacing layer thickness Dspacer to make a narrow band transmission peak appears near the center λ₀, last scan the transmission spectrum with changes in scanning period and duty cycle, find the parameter combination corresponding to the peak, and achieve multi-channel design (Fig.3). Meanwhile, by changing the lateral parameters of the microstructure, multi-channel polarization filtering can be achieved at different wavelengths, thus enabling on-chip integrated spectral imaging (Fig.4). Taking the atmospheric infrared band around 13 μm as an example, an on-chip integrated polarization spectral imaging device with 6 channels is designed, the average transmittance of them is over 94% and the extinction ratio is about 30 (Fig.6 , Tab.1). In addition, research and exploration on the physical mechanisms (Fig.5) and fabrication schemes of the devices (Fig.7) are also conducted. Meanwhile, as the device is not sensitive to the refractive index of the substrate, the selection of the substrate could also be more flexible. This new design approach has opened up new doors for on-chip integrated spectral imaging devices. With the improvement of fabrication technology and further optimization of structure, it is expected to achieve better performance and be successfully applied in the field of polarization spectral imaging. In addition, in recent years, some low dimensional infrared detection materials such as GaSb nanowires have also shown excellent infrared detection performance, and due to their dimensional advantages, they can achieve the detection of polarized infrared light. Assigning spectral selection function to infrared detection materials with polarization selective properties will also be a new research approach in the future.