Chinese Optics Letters, Volume. 7, Issue 10, 924(2009)
Silicon electro-optic modulator with high-permittivity gate dielectric layer
A high-permittivity (high-k) material is applied as the gate dielectric layer in a silicon metal-oxide-semiconductor (MOS) capacitor to form a special electro-optic (EO) modulator. Both induced charge density and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material. The device has an ultra-compact dimension of 691 \mu m in length.
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Mengxia Zhu, Zhiping Zhou, Dingshan Gao. Silicon electro-optic modulator with high-permittivity gate dielectric layer[J]. Chinese Optics Letters, 2009, 7(10): 924
Received: Jul. 14, 2009
Accepted: --
Published Online: Oct. 16, 2009
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