The photo-excitation coefficient, electron recombination coefficient and bulk photovoltaic coefficient of Cu in LiNbO3 are obtained. The effects of doped composition ratio of the deeper and shallower trap centers, oxidization-reduction state on the recording sensitivity and dynamic range are simulated numerically. The crystal conditions for simultaneously optimizing sensitivity and dynamic range are also investigated. The results show that, it is available to choose doping concentration of shallower trap centers as 5.0×1025 m-3 and doping concentration of deeper trap centers as 3×1024～3×1025 m-3 to achieving the larger sensitivity and dynamic range simultaneously in the practical applications.