Chinese Journal of Quantum Electronics, Volume. 32, Issue 6, 673(2015)

Fabrication ofanatase TiO2 film by KrF pulse laser annealing

ZHANGZifeng *... Zhiwei ZHANG, Rongdun HONG, Xiaping CHEN and Zhengyun WU |Show fewer author(s)
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    TiO2 thin films of about 200 nm thickness were prepared by RF magnetron sputtering on quartz substrates at room temperature,and then annealed by a KrF pulse laser with wavelength 248 nm under different power densities in the air. The effect of laser power density on the characteristics of films was systematically analyzed using X-ray diffractometry(XRD),Raman spectra,X-ray photoelectron spectroscopy(XPS),scanning electron microscopy(SEM),atom force microscopy(AFM),high resolution transmission electron microscopy(HRTEM) and selected area electron diffraction(SAED) and UV-vis spectrophotometer. The results showed that high-quality anatase TiO2 films can be obtained when the power density was 0.5 J/cm2. By increasing the power density continually,TiO2 showed the predominant orientation with rutile phase along(1 1 0) reflection,with roughness of the films increasing.

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    ZHANGZifeng, ZHANG Zhiwei, HONG Rongdun, CHEN Xiaping, WU Zhengyun. Fabrication ofanatase TiO2 film by KrF pulse laser annealing[J]. Chinese Journal of Quantum Electronics, 2015, 32(6): 673

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    Paper Information

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    Received: Apr. 10, 2015

    Accepted: --

    Published Online: Dec. 18, 2015

    The Author Email: ZHANGZifeng (chuzhouxiadahao@163.com)

    DOI:10.3969/j.issn.1007-5461. 2015.06.006

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