Optoelectronics Letters, Volume. 11, Issue 1, 10(2015)

Nano-photonic crystal formation on highly-doped n-type silicon

Fu-ru ZHONG1、* and Zhen-hong JIA2
Author Affiliations
  • 1College of Information Science and Technology, Shihezi University, Shihezi 832003, China
  • 2College of Information Science and Engineering, Xinjiang University, Urumqi 830046, China
  • show less

    We present a novel electrochemical technique for the fabrication of nano-photonic crystal structures. Based on a specially designed electrolyte, porous silicon (PSi) layers with different porosities are possible to be produced on highly-doped n-type silicon substrate by varying the applied current density which determines the size and the morphology of pores. By applying an alternative current density modulation during anodization, porous silicon photonic crystals are obtained using HF-containing electrolyte without oxidizing components. The current burst model (CBM) is employed to interpret the mechanism of the formation of the macropore porous silicon.

    Tools

    Get Citation

    Copy Citation Text

    ZHONG Fu-ru, JIA Zhen-hong. Nano-photonic crystal formation on highly-doped n-type silicon[J]. Optoelectronics Letters, 2015, 11(1): 10

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Received: Oct. 4, 2014

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Fu-ru ZHONG (zhfuru@163.com)

    DOI:10.1007/s11801-015-4181-4

    Topics