Acta Physica Sinica, Volume. 68, Issue 24, 247303-1(2019)
In recent years, graphene has received wide attention due to its excellent optoelectronic properties and has been applied to transparent electrodes of light-emitting diodes to replace the scarce and expensive indium antimony oxide (ITO), which is a typical current spreading layer in lateral GaN LED. However, there are some problems in graphene transparent electrode, such as the mismatch between graphene work function and p-GaN work function, and difficult-to-form good Ohmic contact with p-GaN, resulting in poor current expansion and high voltage of devices. In this paper, a thin ITO layer is used as an insertion layer between a three-layer graphene transparent electrode and and p-GaN, thereby improving the Ohmic contact between them. And a three-layer graphene/ITO composite transparent electrode LED is prepared and also compared with the pristine three-layer graphene LED. The thickness of ITO is only 50 nm, which is much thinner than the thickness of ITO in conventional LED. The sheet resistance of the prepared three-layer pristine graphene transparent electrode is 252.6
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Wei-Ling Guo, Jie Deng, Jia-Lu Wang, Le Wang, Jian-Peng Tai.
Received: Jun. 26, 2019
Accepted: --
Published Online: Sep. 17, 2020
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