In0.53Ga0.47As single photon avalanche diodes (SPAD) response wavelength of 950~1700nm. With the advantages of small size and high sensitivity, In0.53Ga0.47As SPADs are widely used in quantum communication, laser ranging and Lidar. Operating temperature is an important factor affecting the performance of In0.53Ga0.47As SPAD. The higher the temperature is, the greater the dark count rate will be, which leads to the greater noise of the device. So the study of temperature characteristics of device can provide important way to suppress dark count. This paper built a mathematical model to extract photoelectric parameters. By analyzing the influence of charge carriers in absorber layer and multiplication layer, optimized structure parameters were obtained. Finally, an In0.53Ga0.47As SPAD chip with a photosensitive surface diameter of 70μm was fabricated, packaged and tested.The results show that the detection efficiency reaches 14.2%, the dark counting 88.6kHz and the NEP 3.82×10-16W·Hz-1/2. The test results agree with the simulation.