Laser & Optoelectronics Progress, Volume. 51, Issue 2, 22302(2014)
Study on the Growth of InGaN/GaN Multiple Quantum Wells on GaN {11-22} Semipolar Plane
Selective area epitaxy is applied to grow GaN {11-22} semipolar plane template, followed by InGaN/GaN multiple quantum wells (MQWs) growth. The results indicate that the GaN template is composed of the {11-22} side facet and planer c plane, and the MQWs show dual-color emission. Local cathodoluminescence reveals that the 390 nm emission peak originates from the MQWs on semipolar plane, while the 400 nm emission peak results from the MQWs on c plane. The large red-shift in emission wavelength for c plane MQWs compared with that of {11-22} semipolar plane MQWs is due to the indium enrichment originating from additional source supply due to the surface migration effect and lateral vapor-phase diffusion during selective area epitaxy. Another important reason is the reduced polarization effect InGaN/GaN MQWs on semipolar plane. At the same time, the growth rate of the semipolar plane is lower than that of the polar c plane under the same conditions.
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Yang Guofeng, Zhu Huaxin, Guo Ying, Li Guohua, Gao Shumei. Study on the Growth of InGaN/GaN Multiple Quantum Wells on GaN {11-22} Semipolar Plane[J]. Laser & Optoelectronics Progress, 2014, 51(2): 22302
Category: Optical Devices
Received: Sep. 2, 2013
Accepted: --
Published Online: Jan. 17, 2014
The Author Email: Guofeng Yang (gfyang@jiangnan.edu.cn)