The 2-4 μm band is a very important infrared atmospheric window. Lasers operating in this band have a wide range of applications in gas detection, medical application and industrial processing. The low-dimensional structure of antiminide semiconductor materials has the unique advantage of narrow forbidden band, direct transition luminescence, and is an ideal material system for realizing mid-infrared semiconductor lasers. In recent years, research on antimonide semiconductor lasers at home and abroad has made important progress, achieving wavelength expansion of quantum well luminescence, room temperature continuous lasing of high-power single chip and laser bars, and continuous room temperature continuous operation of multi-band single-mode lasers. Due to the complex composition of the low-dimensional materials of the antimonide and the special interface passivation properties, the epitaxial materials and process preparation techniques are difficult. Based on the basic principle of antimonide semiconductor lasers, this paper reviewed the research status at home and abroad, introduced the design scheme of the low-dimensional structure lasers antimonide materials, and the main progress of key preparation techniques, and analyzed the performance optimization, focused on research and development direction of such lasers in the future.