Optoelectronics Letters, Volume. 9, Issue 1, 18(2013)
Optimal quantum well width and the effect of quantum well position on the performance of transistor lasers
Transistor laser (TL) model based on InGaP/GaAs/InGaAs/GaAs is analyzed and presented. It is realized that quantum well (QW) with width of 10 nm may be formed for low base threshold current density Jth. The emission wavelength is found to be 1.05 μm, and the indium (In) composition is 0.25 for optimal QW width. It is identified that Jth decreases with the movement of QW towards the base-emitter (B-E) interface. Small signal optical response is calculated, and the effect of QW position is studied. The bandwidth is enhanced due to the movement of the QW towards the emitter base junction.
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Md. Ahsan Habib, Subrata Das, Saeed Mahmud Ullah, Shahida Rafique. Optimal quantum well width and the effect of quantum well position on the performance of transistor lasers[J]. Optoelectronics Letters, 2013, 9(1): 18
Received: Aug. 10, 2012
Accepted: --
Published Online: Oct. 12, 2017
The Author Email: Habib Md. Ahsan (ahsantonmoy2007@yahoo.com)