Optoelectronics Letters, Volume. 9, Issue 1, 18(2013)

Optimal quantum well width and the effect of quantum well position on the performance of transistor lasers

Habib Md. Ahsan1,*... Das Subrata2, Ullah Saeed Mahmud2 and Rafique Shahida2 |Show fewer author(s)
Author Affiliations
  • 1Department of Electronics and Communication Engineering, University of Information Technology and Sciences, Dhaka 1212, Bangladesh
  • 2Department of Applied Physics, Electronics and Communication Engineering University of Dhaka, Dhaka 1000, Bangladesh
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    Transistor laser (TL) model based on InGaP/GaAs/InGaAs/GaAs is analyzed and presented. It is realized that quantum well (QW) with width of 10 nm may be formed for low base threshold current density Jth. The emission wavelength is found to be 1.05 μm, and the indium (In) composition is 0.25 for optimal QW width. It is identified that Jth decreases with the movement of QW towards the base-emitter (B-E) interface. Small signal optical response is calculated, and the effect of QW position is studied. The bandwidth is enhanced due to the movement of the QW towards the emitter base junction.

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    Md. Ahsan Habib, Subrata Das, Saeed Mahmud Ullah, Shahida Rafique. Optimal quantum well width and the effect of quantum well position on the performance of transistor lasers[J]. Optoelectronics Letters, 2013, 9(1): 18

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    Paper Information

    Received: Aug. 10, 2012

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Habib Md. Ahsan (ahsantonmoy2007@yahoo.com)

    DOI:10.1007/s11801-013-2313-2

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