A measurement system was established to study the laser pulse irradiation effects on a plane array Si-CCD at the wavelength of 532 nm and the pulse duration of 170 ps. Experiments on Si-CCD under picosecond laser irradiation were carried out,the typical experiment phenomena were observed and the corresponding energy density thresholds were measured. Furthermore,the microstructure of damaged CCD was observed，and the damage mechanism was analyzed. It was demonstrated that the most severe failures could result from the malfunction of CCD circuits. Experiments on a Si-CCD by laser pulses at the wavelength of 532 nm,800 nm and the pulse duration in 10 ns， 150 fs were carried out,respectively,then the thresholds with different pulse durations were measured and compared. Experimental results indicate that the Si-CCD is disturbed when the laser energy density is between 10-8-10-3 J/cm2,and the permanent damage of Si-CCD is observed when laser energy density is larger than 10-1 J/cm2.