Frontiers of Optoelectronics, Volume. 10, Issue 2, 111(2017)
Basic properties of a new Nd-doped laser crystal: Nd:GdNbO4
A Nd-doped GdNbO4 single crystals have been grown successfully using the Czochralski technique. The chemical etching method was employed to study the defects in the structural morphology of Nd:GdNbO4 crystal with phosphoric acid etchant. Mechanical properties (such as hardness, yield strength, fracture toughness, and brittle index) of the as-grown crystal were systematically estimated on the basis of the Vickers hardness test for the first time. The transmission spectrum of Nd: GdNbO4 was measured in the wavelength range of 320-2400 nm at room temperature, and the absorption peaks were assigned. Results hold great significance for further research on Nd:GdNbO4.
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Shoujun DING, Qingli ZHANG, Wenpeng LIU, Jianqiao LUO, Dunlu SUN. Basic properties of a new Nd-doped laser crystal: Nd:GdNbO4[J]. Frontiers of Optoelectronics, 2017, 10(2): 111
Category: RESEARCH ARTICLE
Received: Mar. 21, 2017
Accepted: May. 9, 2017
Published Online: Jan. 17, 2018
The Author Email: ZHANG Qingli (zq_l@sohu.com)