Frontiers of Optoelectronics, Volume. 10, Issue 2, 111(2017)

Basic properties of a new Nd-doped laser crystal: Nd:GdNbO4

Shoujun DING1,2, Qingli ZHANG1、*, Wenpeng LIU1, Jianqiao LUO1, and Dunlu SUN1
Author Affiliations
  • 1Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
  • 2University of Science and Technology of China, Hefei 230026, China
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    A Nd-doped GdNbO4 single crystals have been grown successfully using the Czochralski technique. The chemical etching method was employed to study the defects in the structural morphology of Nd:GdNbO4 crystal with phosphoric acid etchant. Mechanical properties (such as hardness, yield strength, fracture toughness, and brittle index) of the as-grown crystal were systematically estimated on the basis of the Vickers hardness test for the first time. The transmission spectrum of Nd: GdNbO4 was measured in the wavelength range of 320-2400 nm at room temperature, and the absorption peaks were assigned. Results hold great significance for further research on Nd:GdNbO4.

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    Shoujun DING, Qingli ZHANG, Wenpeng LIU, Jianqiao LUO, Dunlu SUN. Basic properties of a new Nd-doped laser crystal: Nd:GdNbO4[J]. Frontiers of Optoelectronics, 2017, 10(2): 111

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    Paper Information

    Category: RESEARCH ARTICLE

    Received: Mar. 21, 2017

    Accepted: May. 9, 2017

    Published Online: Jan. 17, 2018

    The Author Email: ZHANG Qingli (zq_l@sohu.com)

    DOI:10.1007/s12200-017-0715-7

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