Si-based optoelectronics is becoming a very active research area due to its potential applications for optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. We mainly reviewed the current developments of this exciting field in the recent years. The involved contents indude the design of direct bandgap Si-based low dimensional materials, fabrication of ordered Si-based nanocrystalline films and approach of stable and high-efficient Si-based light-emitting devices. Finally, we predicate the developed tendency of all-Si optoelectronic integrated technology in the near future.