Acta Optica Sinica, Volume. 33, Issue 12, 1223002(2013)
Fabrication of Metamaterial Terahertz Devices by Semiconductor Laser Induced and Non-Electrolytic Plating with Copper
A method for fabricating metamaterial terahertz devices with laser induced and non-electrolytic plating with copper using a semiconductor laser (405 nm) is proposed. The line width of metal structure fabricated by the method is adjustable, the minimum metal width is 5 μm, and its thickness can be adjusted by copper plating time. Moreover, a fabricated band-stop filter working in terahertz band is measured using terahertz time-domain spectrum. The result is in good agreement with finite-difference time-domain simulation. Fabricated quality of devices meet the design requirements. Fabrication of metamaterial terahertz devices by semiconductor laser induced and non-electrolytic plating possesses the advantages of low energy consumption, low equipment cost and high cost-effective as well.
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Wu Dongwei, Liu Jianjun, Li Huayue, Han Hao, Hong Zhi. Fabrication of Metamaterial Terahertz Devices by Semiconductor Laser Induced and Non-Electrolytic Plating with Copper[J]. Acta Optica Sinica, 2013, 33(12): 1223002
Category: Optical Devices
Received: Jun. 20, 2013
Accepted: --
Published Online: Dec. 5, 2013
The Author Email: Dongwei Wu (dongwei_wu@163.com)