Frontiers of Optoelectronics, Volume. 11, Issue 4, 400(2018)
Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes
Based on the newly proposed temperature dependent dead space model, the breakdown voltage and bandwidth of InP/InGaAs avalanche photodiode (APD) have been investigated in the temperature range from -50 ℃ to 100 ℃. It was demonstrated that our proposed model is consistent with the experimental results. Our work may provide a guidance to the design of APDs with controllably low temperature coefficient.
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Yanli ZHAO, Junjie TU, Jingjing XIANG, Ke WEN, Jing XU, Yang TIAN, Qiang LI, Yuchong TIAN, Runqi WANG, Wenyang LI, Mingwei GUO, Zhifeng LIU, Qi TANG. Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes[J]. Frontiers of Optoelectronics, 2018, 11(4): 400
Category: RESEARCH ARTICLE
Received: May. 29, 2018
Accepted: Sep. 20, 2018
Published Online: Jan. 10, 2019
The Author Email: ZHAO Yanli (yanlizhao@hust.edu.cn)