Hydrogenated amorphous silicon films were deposited by facing target sputtering with different hydrogen dilution ratio with H2 as reaction gas.The growth rate and the optical properties of a-Si∶H films with different hydrogen dilution ratio were characterized by surface profiler, Fourier-transform infrared spectroscopy, Raman scattering and ultraviolet-visible transmittance spectrum. It was found that, the low temperature and high deposition of a-Si∶H films can be deposited by facing target sputtering method. With increasing hydrogen dilution, a trend that the deposition rate of a-Si∶H films first decreases and then increases is showed. Fourier transform infrared transmission spectra show that hydrogen content of a-Si∶H films increases first and then becomes smaller. While, through analysising the Raman spectra and UV-visible light transmission spectrum, the degree of order and the optical band gap also first increase and then decrease. Obviously, the film structure can be effectively controlled by the change of the hydrogen dilution with this technology.