The molecular beam epitaxy growth and physical property of photoluminescence (PL) of two layer stacked InAs/GaAs quantum dots have been investigated. The emission wavelengths of the InAs quantum dots (QD) are extended to 1391~1438 nm through optimizations of growth conditions including InAs deposition amounts, thicknesses of GaAs space layers and growth temperatures. It is found that the PL intensities, wavelengths, line widths and uniformities of the high density (2×1010 cm-2) InAs QD are improved by using in-situ annealing of GaAs interval layers and Sb assisted growth of InGaAs cover layers.