Chinese Journal of Quantum Electronics, Volume. 23, Issue 6, 881(2006)
Direct analysis in time domain method for TW electrode on InP/InGaAsP-EAM
Traveling wave(TW)electrode structure is widely used for it needs less multi-action length between optical carrier and digital modulation and can get rid of contribution capacity's constraints on modulation bandwidth. Based on time domain method,TW electrode on InP/InGaAsP electronic absorption modulator is simulated,analyzed and compared with the fabrication on characteristic impedance Zc and loss coefficient α. The numeric results calculated by time domain method coincide with measurement well. Characteristic impedance is about 45Ω,and the loss coefficient is less than 4 dB/mm from DC to 20 GHz.
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CAI Chun, LIU Xu, XIAO Jin-biao, ZHANG Ming-de, SUN Xiao-han. Direct analysis in time domain method for TW electrode on InP/InGaAsP-EAM[J]. Chinese Journal of Quantum Electronics, 2006, 23(6): 881
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Received: Dec. 5, 2005
Accepted: --
Published Online: Jun. 7, 2010
The Author Email: Chun CAI (caicren@seu.edu.cn)
CSTR:32186.14.