Semiconductor lighting devices based on Ⅲ-nitride materials, such as AlN and GaN, have broad application prospects, but the commonly used sapphire substrates have poor heat dissipation as well as large lattice and thermal mismatches with AlN and GaN, which limit their promotion and application. Graphene is a two-dimensional layered material comprising only carbon atoms. Graphene layers are combined with van der Waals forces. Using graphene as a buffer layer can alleviate the mismatch between sapphire and Ⅲ-nitride materials. AlN and other nitrides are grown on graphene-sapphire substrates. Graphene is used to alleviate the problem of large lattice mismatch between the sapphire substrate and Ⅲ-nitride materials, which is conducive to the preparation of high-power light-emitting diodes. However, the growth of graphene on an insulating substrate is difficult. In this study, a nickel layer is coated on sapphire substrates, and nickel is used to assist the growth of graphene on the sapphire substrate, which is helpful to realize high-power light-emitting diodes using graphene.