The influence of preset condition and the two electrons transport on the noise of the quantum dot infrared photodetectors was calculated and simulated, which was based on the noise model including the influence of the electric field on the drift velocity of electrons, moreover, with account taken of the dependence of the activation energy on the microscale and the nanoscale electron transport. The results show that the noise model has a good agreement with the experimental data at 25~45kV/cm electric field. The noise increases with the electric field and temperature, the noise increases rapidly below 80K, but it increases slowly above 80K, and when the temperature is lower, the change of the noise is more obvious with the change of the electric field. The noise does not change along with the change of the activation energy under the microscale electron transport, decreases with increasing the activation energy under the nanoscale electron transport, and increases with increasing the change rate of the activation energy under the nanoscale electron transport. The research can guide the design and improve the performance of the quantum dot infrared photodetectors.