Optoelectronics Letters, Volume. 10, Issue 3, 184(2014)
Performance of Er3+-doped chalcogenide glass MOF amplifier applied for 1.53 μm band
?Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2014 A model of Er3+-doped chalcogenide glass (Ga5Ge20Sb10S65) microstructured optical fiber (MOF) amplifier under the excitation of 980 nm is presented to demonstrate the feasibility of it applied for 1.53 μm band optical communications. By solving the Er3+population rate equations and light power propagation equations, the amplifying performance of 1.53 μm band signals for Er3+-doped chalcogenide glass MOF amplifier is investigated theoretically. The results show that the Er3+-doped chalcogenide glass MOF exhibits a high signal gain and broad gain spectrum, and its maximum gain for small-signal input (-40 dBm) exceeds 22 dB on the 300 cm MOF under the excitation of 200 mW pump power. Moreover, the relations of 1.53 μm signal gain with fiber length, input signal power and pump power are analyzed. The results indicate that the Er3++-doped Ga5Ge20Sb10S65MOF is a promising gain medium which can be applied to broadband amplifiers operating in the third communication window.
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ZHENG Yuan-hui, ZHOU Ya-xun, YU Xing-yan, QI Ya-wei, PENG Sheng-xi, WU Li-bo, YANG Feng-jing. Performance of Er3+-doped chalcogenide glass MOF amplifier applied for 1.53 μm band[J]. Optoelectronics Letters, 2014, 10(3): 184
Received: Mar. 1, 2014
Accepted: --
Published Online: Oct. 12, 2017
The Author Email: Ya-xun ZHOU (zhouyaxun@nbu.edu.cn)