Journal of Advanced Dielectrics, Volume. 14, Issue 2, 2440004(2024)

Ferroelastic domain engineering in layered-perovskite Bi2WO6 thin films by post-annealing

Jia Yang1, Minchuan Liang1, Huayu Yang1, Hui Ai2, Tong Zhang3, Qing Han1, Ji Ma3, Houbing Huang1, and Jing Wang1、*
Author Affiliations
  • 1Advanced Research Institute of Multidisciplinary Science and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China
  • 2Analysis & Testing Center, Beijing Institute of Technology, Beijing 100081, P. R. China
  • 3School of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, P. R. China
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    Due to the strong magneto-elastic coupling in ferromagnetic/ferroelectric heterostructures and the potential applications in low-power magnetoelectric nanodevices, ferroelastic domains and the corresponding dynamic evolution under external stimuli have attracted intense research interest. Using pulsed laser deposition method, we have successfully grown layered-perovskite Bi2WO6 thin films on SrTiO3 (001) substrates. Interestingly, for the as-grown thin films with step-flow morphology, the relationship between ferroelastic domain number and size shows a normal distribution, which is similar to the Boltzman distribution for confined gas molecules at equilibrium. In addition, with post-annealing, the thin films with as-grown island-like morphology can be optimized for layered morphology, and the initial small ferroelastic domains can grow into large domains. This study provides an effective strategy for ferroelastic domain engineering, which can be applied for the design of multiferroic heterostructures and low-power nanodevices.

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    Jia Yang, Minchuan Liang, Huayu Yang, Hui Ai, Tong Zhang, Qing Han, Ji Ma, Houbing Huang, Jing Wang. Ferroelastic domain engineering in layered-perovskite Bi2WO6 thin films by post-annealing[J]. Journal of Advanced Dielectrics, 2024, 14(2): 2440004

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    Paper Information

    Category: Research Articles

    Received: Nov. 12, 2023

    Accepted: Jan. 15, 2024

    Published Online: May. 24, 2024

    The Author Email: Wang Jing (jwang@bit.edu.cn)

    DOI:10.1142/S2010135X24400046

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