Studies on Time-resolved Photoluminescence Spectrum of Wetting Layer and Quantum Dots in the Structure of Self-organized Quantum Dots

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Quantum Electronics, Volume. 20, Issue 2, 208(2003)

[in Chinese]^1、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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Single InAs layers (2 and 2.5 ML thick, respectively) were grown on (001) GaAs substrate by molecular-beam epitaxy (MBE). Formation of quantum dots was verified by atomic force microscopy (AFM). We studied and compared InAs quantum dots and wetting layer by photoluminescence and time-resolved spectrum. Migration of carriers among quantum dots and wetting layer were investigated, which explained our results well.

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InAs quantum dots time-resolved spectrum wetting layer

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Studies on Time-resolved Photoluminescence Spectrum of Wetting Layer and Quantum Dots in the Structure of Self-organized Quantum Dots[J]. Chinese Journal of Quantum Electronics, 2003, 20(2): 208

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Paper Information

Category:

Received: Apr. 27, 2002

Accepted: --

Published Online: May. 15, 2006

The Author Email: (Zhywu@xmu.edu.cn)

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology