Chinese Optics Letters, Volume. 7, Issue 4, 04325(2009)

Deep silicon grating as high-extinction-ratio polarizing beam splitter

Jijun Feng, Changhe Zhou, Bo Wang, and Jiangjun Zheng
Author Affiliations
  • Information Optics Lab, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 2018002 State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800E-mail: fjijun@siom.ac.cn
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    A deep binary silicon grating as high-extinction-ratio reflective polarizing beam splitter (PBS) at the wavelength of 1550 nm is presented. The design is based on the phenomenon of total internal reflection (TIR) by using the rigorous coupled wave analysis (RCWA). The extinction ratio of the rectangular PBS grating can reach 2.5\times10^5 with the optimum grating period of 397 nm and groove depth of 1.092 \mum. The efficiencies of TM-polarized wave in the 0th order and TE-polarized wave in the -1st order can both reach unity at the Littrow angle. Holographic recording technology and inductively coupled plasma (ICP) etching could be used to fabricate the silicon PBS grating.

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    Jijun Feng, Changhe Zhou, Bo Wang, Jiangjun Zheng. Deep silicon grating as high-extinction-ratio polarizing beam splitter[J]. Chinese Optics Letters, 2009, 7(4): 04325

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    Paper Information

    Received: Jul. 18, 2008

    Accepted: --

    Published Online: Apr. 27, 2009

    The Author Email:

    DOI:10.3788/COL20090704.0325

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