Owing to the excellent optoelectronic characteristics, such as high absorption coefficient and suitable bandgap, CuPbSbS3 semiconductor materials have a wide application prospect in solar cells. In this paper, CuPbSbS3 films were deposited in the annealing process of tube furnace through butyldithiocarbamic acid (BDCA) solution method. CuPbSbS3 film is regulated deposited by adjusting the proportion of CS2 in BDCA solution. The effect of the proportion of CS2 in BDCA solution on the surface morphology and crystal structure of CuPbSbS3 films was analyzed by scanning electron microscopy and X-ray diffractometer. The results indicate that deposited CuPbSbS3 film exhibits good crystalline morphology by fixing the volume ratio of ethanol, n-butylamine, and carbon disulfide of 7.4∶9.6∶6. Then, solar cells with the structure of FTO/SnO2/CuPbSbS3/Spiro-OMeTAD/Ag were fabricated. The interfacial charge transport kinetics of CuPbSbS3 solar cells were further investigated by Mott-Schottky curves, Nyquist impedance spectra, dark current density-voltage curves, and current-voltage curves of symmetrical devices in the dark state. The results from the above electrical measurements demonstrate that the defect recombination center density and charge transport resistance of the deposited CuPbSbS3 films is effectively reduced, decreasing the non-radiative recombination of photogenerated carriers and improving the carrier transport ability. Finally, the CuPbSbS3 solar cell shows a photoelectric conversion efficiency of 0.81% (a short-circuit current density of 9.08 mA·cm-2 and an open-circuit voltage of 250 mV). The relevant research results provide an experimental basis for the fabrication of high-quality CuPbSbS3 films.