Acta Optica Sinica, Volume. 7, Issue 5, 473(1987)
Discussion of measuring signal-noise ratio of high power laser pulse using silicon photoelectronic switch
The laser damage of silicon in silicon photoeleotronic has been investigated with a 1.06μm laser. Laser pulse duration is 50ps and energy is 20mJ/pulse. Calculations show that the damage occurs at the silicon surface and depend on pulse duration time, laser energy flux and manner of the laser irradiation. The experimental result is in agreement with the theoretical analysis.
Keywords
Tools
Get Citation
Copy Citation Text
ZHI TINGTING, CHEN LANYONG. Discussion of measuring signal-noise ratio of high power laser pulse using silicon photoelectronic switch[J]. Acta Optica Sinica, 1987, 7(5): 473
Paper Information
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20