Semiconductor Optoelectronics, Volume. 44, Issue 5, 690(2023)

Design and Simulation of High g Piezoresistive Accelerometers

LI Yongwei1,2, GUO Jinqin1,2、*, QIAO Junfu1,2, LI Feng1,2, QIAO Zhimin1,2, ZHANG Ye1,2, LU Jing1,2, ZHANG Jian1,2, and YAN Shasha1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    A four-end beam structure piezoresistive accelerometer with high sensitivity and small size is designed in this paper. The structure with different cantilever beam and mass block sizes is modeled using finite element software, and sensitivity and stress analysis, modal analysis, and dynamic response are performed on the structure. The simulation results show that the axial sensitivity reaches 7.40μV/g, the lateral sensitivity is 0.33%, the linearity is 0.06%, the response time is 20.3μs, and the natural frequency is 111.2kHz within the 50000g range. The impact resistance can reach 334000g, which can satisfy the test needs in a high-g environment, and this research provides an accurate and efficient simulation method for the development of high-performance sensors.

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    LI Yongwei, GUO Jinqin, QIAO Junfu, LI Feng, QIAO Zhimin, ZHANG Ye, LU Jing, ZHANG Jian, YAN Shasha. Design and Simulation of High g Piezoresistive Accelerometers[J]. Semiconductor Optoelectronics, 2023, 44(5): 690

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    Paper Information

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    Received: May. 26, 2023

    Accepted: --

    Published Online: Nov. 20, 2023

    The Author Email: Jinqin GUO (gjqsrh@163.com)

    DOI:10.16818/j.issn1001-5868.2023052602

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