Laser & Optoelectronics Progress, Volume. 60, Issue 17, 1716002(2023)

Preparation and Performance of As40Se60 Connective Layer for Sulfur Substrate

Shunguan Zhang, Shan Li*, Zhuo Liu, Shaoyu Zeng, and Kebin Tang
Author Affiliations
  • School of Mechanical and Electrical Engineering, Kunming University of Science and Technology, Kunming 650500, Yunan, China
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    To address the problem of As40Se60 delamination from the sulfur substrate, a simulation model with ZnS, ZnSe, and Ge as the connective layer and As2Se3 as the substrate is established using molecular dynamics simulation software. The changes in structural potential energy, total energy, and adsorption energy after vacuum annealing of the simulation model are analyzed. Moreover, ZnS, ZnSe, and Ge monolayer films of the same thickness were prepared in the coating experiments and subjected to the adhesion test. Simulation and experimental results show that ZnS film is prone to shedding, whereas Ge film and ZnSe film do not easily fall off. ZnS film is prone to depacking, but its adhesion to the substrate may be improved by reducing the film thickness and substrate coating temperature.

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    Shunguan Zhang, Shan Li, Zhuo Liu, Shaoyu Zeng, Kebin Tang. Preparation and Performance of As40Se60 Connective Layer for Sulfur Substrate[J]. Laser & Optoelectronics Progress, 2023, 60(17): 1716002

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    Paper Information

    Category: Materials

    Received: Jun. 15, 2022

    Accepted: Aug. 29, 2022

    Published Online: Sep. 13, 2023

    The Author Email: Li Shan (624814911@qq.com)

    DOI:10.3788/LOP221842

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