Acta Photonica Sinica, Volume. 41, Issue 9, 1086(2012)

Influence of O2/Ar Ratio on the Properties of Transparent Conductive SnO2/Ag/SnO2 Trilayer Film

YU Shihui1,2、*, DING Linghong1,2, XUE Chuang1,2, and ZHANG Weifeng1,2
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  • 1[in Chinese]
  • 2[in Chinese]
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    SnO2/Ag/SnO2 trilayer thin films were prepared on glass substrates by RF magnetron sputtering of SnO2 with different O2/Ar ratio and DC magnetron sputtering of Ag. Several analytical tools such as Hall measurements, fourpoint probe and ultravioletvisiblenear infrared (UVVisNIR) spectrophotometer were used to explore the causes of the changes in electrical and optical properties. When O2/Ar ratio is 1∶14, the film had a figure of merit of 1.69×10-2 Ω-1, the resistivity is 9.8×10-5 Ω·cm, and the sheet resistance is 9.68Ω/sq, while the average transmittance is still as high as 85% in the visible light region. In addition, when O2/Ar ratio is 1: 14, The flexible SnO2/Ag/SnO2 trilayer thin films with excellent photoelectric performance can be obtained by magnetron sputtering on PET substrates, the average transmittance is above 85%, the resistivity is 1.22×10-4 Ω·cm, and the sheet resistance is 12.05 Ω/sq.

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    YU Shihui, DING Linghong, XUE Chuang, ZHANG Weifeng. Influence of O2/Ar Ratio on the Properties of Transparent Conductive SnO2/Ag/SnO2 Trilayer Film[J]. Acta Photonica Sinica, 2012, 41(9): 1086

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    Paper Information

    Received: May. 7, 2012

    Accepted: --

    Published Online: Aug. 31, 2012

    The Author Email: Shihui YU (yash728@126.com)

    DOI:10.3788/gzxb20124109.1086

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