Acta Photonica Sinica, Volume. 41, Issue 9, 1086(2012)
Influence of O2/Ar Ratio on the Properties of Transparent Conductive SnO2/Ag/SnO2 Trilayer Film
SnO2/Ag/SnO2 trilayer thin films were prepared on glass substrates by RF magnetron sputtering of SnO2 with different O2/Ar ratio and DC magnetron sputtering of Ag. Several analytical tools such as Hall measurements, fourpoint probe and ultravioletvisiblenear infrared (UVVisNIR) spectrophotometer were used to explore the causes of the changes in electrical and optical properties. When O2/Ar ratio is 1∶14, the film had a figure of merit of 1.69×10-2 Ω-1, the resistivity is 9.8×10-5 Ω·cm, and the sheet resistance is 9.68Ω/sq, while the average transmittance is still as high as 85% in the visible light region. In addition, when O2/Ar ratio is 1: 14, The flexible SnO2/Ag/SnO2 trilayer thin films with excellent photoelectric performance can be obtained by magnetron sputtering on PET substrates, the average transmittance is above 85%, the resistivity is 1.22×10-4 Ω·cm, and the sheet resistance is 12.05 Ω/sq.
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YU Shihui, DING Linghong, XUE Chuang, ZHANG Weifeng. Influence of O2/Ar Ratio on the Properties of Transparent Conductive SnO2/Ag/SnO2 Trilayer Film[J]. Acta Photonica Sinica, 2012, 41(9): 1086
Received: May. 7, 2012
Accepted: --
Published Online: Aug. 31, 2012
The Author Email: Shihui YU (yash728@126.com)