In the medical field, the 1160-nm wavelength vertical-external-cavity surface-emitting semiconductor laser (VECSEL) is the fundamental frequency lasing source of orange laser. However, the strain accumulation effect induced by the high strain InGaAs quantum well in the luminous zone limits high output power. In this study, the secondary compensation method is proposed for a high strain InGaAs quantum well using the GaAsP material in a single luminescent zone to achieve high material growth quality of optical absorption layers. The structure of the absorption layer containing Al is designed to reduce the photogenic carrier-blocking effect caused by GaAsP barrier and improve the injection efficiency of photogenic carriers. The lasing wavelength and output power of the prepared VECSEL devices are 1160 nm and 1.02 W, respectively. The lasing spot shows symmetrical morphology, and the divergence angles of the spot at orthogonal directions are 10.5° and 11.9°.