Laser & Optoelectronics Progress, Volume. 56, Issue 2, 021603(2019)
Vacancy Formation During Solidification of Metal Ag
The kinetics and defect trapping at the solid-liquid interface of simple metal Ag during the solidification process are investigated by molecular dynamics simulation. It is found that there exists a certain characteristic value (T*) for the interfacial temperature of metal Ag at which the growth rate reaches a maximum value. Meanwhile, the vacancy defects are predominant in the solidification process of liquids. The calculation results show that there exists a linear relationship between defect concentration and interfacial temperature. The defect concentration gradually increases with the decrease of interfacial temperature, and a transition occurs near this characteristic temperature. In addition, the defect concentration is found to be dependent on growth velocity. Above the characteristic temperature (T>T*), the defect concentration almost linearly depends on the growth velocity, and both are independent on orientations. In contrast, below the characteristic temperature (T
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Haiyan Zhang, Lichun Wang. Vacancy Formation During Solidification of Metal Ag[J]. Laser & Optoelectronics Progress, 2019, 56(2): 021603
Category: Materials
Received: Jul. 24, 2018
Accepted: Aug. 2, 2018
Published Online: Aug. 1, 2019
The Author Email: Zhang Haiyan (zhanghy@yzu.edu.cn)