Laser & Optoelectronics Progress, Volume. 60, Issue 1, 0112005(2023)
Simulation and Experimental Study of Doping Properties of a Silicon Wafer Using Optical Cavity Ring-Down Measurement Method
The cavity ring-down method has an extremely high measurement sensitivity to the absorption of a medium in the cavity and can be used to accurately measure cavity loss. Based on the theories of free carrier absorption and resonant cavity, this study establishes a theoretical model of an optical cavity ring-down to measure the properties of semiconductor materials and derives the functional relationship among the cavity ring-down signal, semiconductor material characteristic parameters, and cavity structure parameters. Simulation analysis and experimental verification are performed. Simulation results show that the cavity ring-down method can be used to accurately measure semiconductor material properties, such as doping concentration and resistivity. Meanwhile, based on the proposed method, the doping concentration and resistivity of a crystalline silicon wafer are determined experimentally to be
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Chenyang Wei, Qian Wang, Honglu Hou. Simulation and Experimental Study of Doping Properties of a Silicon Wafer Using Optical Cavity Ring-Down Measurement Method[J]. Laser & Optoelectronics Progress, 2023, 60(1): 0112005
Category: Instrumentation, Measurement and Metrology
Received: Oct. 29, 2021
Accepted: Dec. 13, 2021
Published Online: Jan. 3, 2023
The Author Email: Hou Honglu (hlhou@sina.com)