With further development of the high brightness blue GaN-based LEDs, it would bring about a revolution in the illumination field. GaN-based materials are the focus in the semiconductor research and investment at present. In this paper. An overview of the basic properties of the nitrides, material film growth and some key techniques, such as ohmic contact, etching of GaN-based LED epilayer recent progress and the future prospect of GaN-based blue HB-LED devices is also presented.