Laser & Optoelectronics Progress, Volume. 52, Issue 9, 91404(2015)

High Power 980 nm Ridge Waveguide Semiconductor Laser Diode

Liu Bin1,2、* and Liu Yuanyuan3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    The design and fabrication of high power 980 nm ridge waveguide semiconductor laser diodes are described. To reduce the optical power density on facets, the broad-waveguide structure is designed. The 500 mW kink-free laser diodes is obtained by standard ridge waveguide laser diode process techniques, and the catastrophic optical damage (COD) level of the LDs is 560 mW.

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    Liu Bin, Liu Yuanyuan. High Power 980 nm Ridge Waveguide Semiconductor Laser Diode[J]. Laser & Optoelectronics Progress, 2015, 52(9): 91404

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Mar. 10, 2015

    Accepted: --

    Published Online: Aug. 28, 2015

    The Author Email: Bin Liu (rays_liu@126.com)

    DOI:10.3788/lop52.091404

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