Laser & Optoelectronics Progress, Volume. 52, Issue 9, 91404(2015)
High Power 980 nm Ridge Waveguide Semiconductor Laser Diode
The design and fabrication of high power 980 nm ridge waveguide semiconductor laser diodes are described. To reduce the optical power density on facets, the broad-waveguide structure is designed. The 500 mW kink-free laser diodes is obtained by standard ridge waveguide laser diode process techniques, and the catastrophic optical damage (COD) level of the LDs is 560 mW.
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Liu Bin, Liu Yuanyuan. High Power 980 nm Ridge Waveguide Semiconductor Laser Diode[J]. Laser & Optoelectronics Progress, 2015, 52(9): 91404
Category: Lasers and Laser Optics
Received: Mar. 10, 2015
Accepted: --
Published Online: Aug. 28, 2015
The Author Email: Bin Liu (rays_liu@126.com)