We calculate the band offset ratio of InGaAs quantum wells with different barrier materials using Model-solid theory and Harrison model. The Model-solid theory, which is more suitable for the studied materials, is selected to calculate the band offset ratio. Then we discuss the influence of the strain, quantum well material composition, barrier material composition and band gap, on the band offset. The results show that the compressive strain will increase the band gap and reduce the band offset. With increase of the trap material composition and barrier material composition, the band offset will gradually increase. However, the band offset ratio is not always increased with the increase of barrier material composition. In InxGa1-xAs/AlyGa1-yAs quantum wells, the Al content (y) of about 0.1 is the preferred value, and the In content (x) less than 0.2 is the preferred value.