Acta Optica Sinica, Volume. 5, Issue 6, 528(1985)
Theoretical analysis of bistable semiconductor lasers
A theoretical analysis of hysteresis is presented on bistable semiconductor lasers. First, characteristics of gain and loss are discussed, followed by deduction of the basic formula according to threshold conditions. The formula is then used in a quantitative description of the hysteresis and its dependence on temperature. As a typical example, calculation are carried out for a GaAs-AlGaAs device.
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DU BAOXUN. Theoretical analysis of bistable semiconductor lasers[J]. Acta Optica Sinica, 1985, 5(6): 528