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Chinese Optics Letters, Volume. 5, Issue 10, 601(2007)

A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode

Chun-Jung Lin and Gong-Ru Lin
Author Affiliations
  • Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 106
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    Enhanced near-infrared (NIR) electroluminescence (EL) of a metal-oxide-semiconductor light emitting device (MOSLED) made on CO2 laser-annealed SiOx film is demonstrated. An EL power of near 50 nW from CO2 laser rapid-thermal-annealing (RTA) MOSLED under a biased voltage of 85 V and a current density of 2.3 mA/cm2 is preliminarily reported.

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    160.2540250.5230
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    Chun-Jung Lin, Gong-Ru Lin. A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode[J]. Chinese Optics Letters, 2007, 5(10): 601

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    Paper Information

    Received: Jul. 31, 2007

    Accepted: --

    Published Online: Oct. 11, 2007

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    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology