Laser & Optoelectronics Progress, Volume. 56, Issue 19, 190002(2019)
Development of Research on Damage Characteristics of Calcium Fluoride Crystal Under Deep Ultraviolet Laser Irradiation
The development of semiconductor lithography technology requires light sources with short wavelengths. Excimer laser-based lithography light sources (i.e., KrF-248 nm and ArF-193 nm) are gradually replacing the previously used light sources based on a Hg lamp, which are the commonly used light sources in current semiconductor lithography technology. The optical components that are currently employed in lithographic light sources primarily use calcium fluoride (CaF2) materials, which have excellent transmission characteristics in the deep ultraviolet region. In this study, the damage characteristics of the laser-material interaction in the development of the light source are analyzed. The development of the research on ultraviolet resistance of CaF2 materials is comprehensively analyzed by investigating the physicochemical properties of CaF2 materials, characteristics of laser radiation, and damage mechanism of the laser-material interaction. The laser damage characteristics of CaF2 materials for different applications are compared. The approaches and methods to improve the damage thresholds of optical components are summarized.
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Huiwen Zong, Jiangshan Zhao, Xingliang Song, Xin Guo, Qian Wang, Hui Li, Yi Zhou. Development of Research on Damage Characteristics of Calcium Fluoride Crystal Under Deep Ultraviolet Laser Irradiation[J]. Laser & Optoelectronics Progress, 2019, 56(19): 190002
Category: Reviews
Received: Feb. 28, 2019
Accepted: Apr. 15, 2019
Published Online: Oct. 12, 2019
The Author Email: Zong Huiwen (zonghuiwen16@mails.ucas.ac.cn), Zhao Jiangshan (zhaojiangshan@aoe.ac.cn)