Semiconductor Optoelectronics, Volume. 43, Issue 6, 1130(2022)

Design of High Speed and High Gain CMOS Readout Chip for Laser Pulse Ranging

GUO Jinyuan1 and YUAN Jianhui1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    In order to further realize the basic requirements of high gain and high bandwidth of laser echo pulse processing circuit, the structural design of CMOS integrated circuit was deeply studied in this paper. The improved RGC transimpedance amplifier, the cascade structure of automatic gain control Cherry-Hooper, and the two terminal output source follower were used as preamplifier, voltage broadband amplifier and buffer link respectively to form the receiving path of laser pulse signal. The circuit bandwidth expansion was realized by using MOS_L equivalent parallel inductance peaking technology. The circuit performance parameters were simulated and tested under the CMOS process condition of 0.5μm. The results show that the signal bandwidth, DC gain, input impedance and output voltage response amplitude of the signal processing circuit are 100MHz, 141dB, 117Ω and 1V respectively. Finally, the specific layout design and test scheme of the circuit were proposed.

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    GUO Jinyuan, YUAN Jianhui. Design of High Speed and High Gain CMOS Readout Chip for Laser Pulse Ranging[J]. Semiconductor Optoelectronics, 2022, 43(6): 1130

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    Paper Information

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    Received: Jun. 27, 2022

    Accepted: --

    Published Online: Jan. 27, 2023

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2022062702

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