Graphene with high transmittance and great conductivity at wide band is expected to be the electromagnetic shielding materials for optical widows. At present, a large area of monolayer and bi-layer graphene was prepared by the method of chemical vapor deposition (CD). In this way, graphene has low carrier concentration and surface grain boundary effect, which is hard to meet the actual demand of shielding. This paper we use AuCl3 doped graphene to improve carrier concentration and reduce the surface resistance. Using Raman spectroscopy to measure multi points on sample surface, we obtained the situation of intrinsic and doped graphene layers, defects, doping type and continuity. Considering the influence of chemical potential on the graphene conductivity, the shielding effectiveness (SE) can be derived by the anisotropic medium plan wave transmission line model. The experiment which refers to the GJB standard is carried out on the shielding effectiveness of intrinsic and doped graphene. The result suggests that graphene films transferred on PET have average SE at about 6.7 dB, and the theoretical prediction agrees with the measured characteristics well.