Chinese Journal of Quantum Electronics, Volume. 21, Issue 5, 565(2004)
Long-wavelength GaInNAs vertical-cavity surface-emitting lasers
The combination of a novel direct-transition GaInNAs and AlAs/GaAs distributed Bragg reflector with high reflectivity are making up of a GaAs-based long wavelength (1.3~1.6μm) vertical-cavity surface-emitting laser, and the device are becoming the essential element in optical communication, network, and data treatment. We reviewed the long wavelength GaIn-NAs vertical-cavity surface-emitting laser from selection of material, epitaxial technology, and overseas and domestic development of GaInNAs vertical-cavity surface-emitting laser.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Long-wavelength GaInNAs vertical-cavity surface-emitting lasers[J]. Chinese Journal of Quantum Electronics, 2004, 21(5): 565