Chinese Journal of Quantum Electronics, Volume. 21, Issue 5, 565(2004)

Long-wavelength GaInNAs vertical-cavity surface-emitting lasers

[in Chinese]1,2、*, [in Chinese]1, [in Chinese]3, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]1
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    The combination of a novel direct-transition GaInNAs and AlAs/GaAs distributed Bragg reflector with high reflectivity are making up of a GaAs-based long wavelength (1.3~1.6μm) vertical-cavity surface-emitting laser, and the device are becoming the essential element in optical communication, network, and data treatment. We reviewed the long wavelength GaIn-NAs vertical-cavity surface-emitting laser from selection of material, epitaxial technology, and overseas and domestic development of GaInNAs vertical-cavity surface-emitting laser.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Long-wavelength GaInNAs vertical-cavity surface-emitting lasers[J]. Chinese Journal of Quantum Electronics, 2004, 21(5): 565

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    Paper Information

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    Received: Jun. 26, 2003

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (changling_yan@yahoo.com.cn)

    DOI:

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