Photostimulated luminescent (PSL) materials written by near-infrared (NIR) light can not only promote the practical application of PSL materials for information storage, but also play a significant role in biological imaging and coding. However, high-capacity PSL materials for NIR writing are still lacking considerably. Herein, BaSi₂O₅∶Eu²⁺,Nd³⁺ with thermal-assisted increment filling capacity that could be excited by ultraviolet light was first selected, and Yb³⁺ ions were further doped to it for optimizing the thermal conversion of NIR light. Combined with the up-conversion luminescent material NaYF₄∶Yb³⁺,Tm³⁺ containing blue and violet light emission, intensity multiplexing of optical storage application was successfully demonstrated solely using a 980 nm laser regulation. This study provides an efficient NIR light writing-type PSL material and demonstrates the high efficiency for NIR writing on thermal-assisted photoexcited luminescent materials.