Chinese Optics Letters, Volume. 6, Issue 9, 689(2008)

Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells

Xusheng Zhou, Ni Cui, Jifeng Zu, and Shangqing Gong
Author Affiliations
  • Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
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    We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects, respectively. It is shown that propagation effects have a larger impact on Rabi flopping than the nonlinearities rooted from electron-electron interactions in multiple quantum wells. By using ultrashort \pi pulses, an almost complete population inversion exists if the propagation effects are not considered; while no complete population inversion occurs in the presence of propagation effects. Furthermore, the magnitude of the impact of propagation effects may be controlled by varying the carrier density.

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    Xusheng Zhou, Ni Cui, Jifeng Zu, Shangqing Gong. Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells[J]. Chinese Optics Letters, 2008, 6(9): 689

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    Paper Information

    Received: Mar. 28, 2008

    Accepted: --

    Published Online: Sep. 11, 2008

    The Author Email:

    DOI:10.3788/COL20080609.0689

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