Chinese Journal of Lasers, Volume. 18, Issue 6, 479(1991)
Optogalvanic effect of neon with RF dischargie and its application in the measurement of high lying states
We have made comprehensive investigations over the optogalvanic effect of neon with RF discharge, and revealed the general characters of the polarities and spatial behavior of the signal with the variation of discharge intensity. Qualitative explanations are given. We also measured the high lying states by detecting the optogalvanic signal of two-step excitation of two pulsed dye laser, and recognized states as high as 46d' at the lowest discharge intensity. In addition, we observed the signal of two-photon transition of neon at 592.3 nm by focusing the single pulsed dye laser beam.
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[in Chinese], [in Chinese], [in Chinese]. Optogalvanic effect of neon with RF dischargie and its application in the measurement of high lying states[J]. Chinese Journal of Lasers, 1991, 18(6): 479