Acta Optica Sinica, Volume. 3, Issue 6, 568(1983)
Optical absorption of silicon under CW CO2 laser irradiation
Basing on the Fermi statistical distribution of electron and hole in semiconductor silicon, the dependence of the transmittance of silicon under CO2 laser irradiation on temperature has been calculated, furthermore theoretical results were proved by experimental data. It has been shown that silicon can strongly absorb energy of the beam under intense CO2 laser irradiation, the mechanism of the absorption is dominately absorption of the free carrier.
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LI YUANHENG. Optical absorption of silicon under CW CO2 laser irradiation[J]. Acta Optica Sinica, 1983, 3(6): 568