Chinese Optics Letters, Volume. 4, Issue 6, 336(2006)

Comparative studies of semiconductor saturable absorber mirror mode-locking dynamics in pulsed diode-end-pumped picosecond Nd:GdVO4 and Nd:YAG lasers

Bingyuan Zhang1,2、*, Gang Li1, Meng Chen1, Guoju Wang2, and Yonggang Wang3
Author Affiliations
  • 1College of Laser Engineering, Beijing University of Technology, Beijing 100022
  • 2College of Physics Science and Information Engineering, Liaocheng University, Liaocheng 252059
  • 3Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100081
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    Ultrashort pulses were generated in passively mode-locked Nd:YAG and Nd:GdVO4 lasers pumped by a pulsed laser diode with 10-Hz repetition rate. Stable mode-locked pulse trains were produced with the pulse width of 10 ps. The evolution of the mode-locked pulse was observed in the experiment and was discussed in detail. Comparing the pulse evolutions of Nd:YAG and Nd:GdVO4 lasers, we found that the buildup time of the steady-state mode-locking with semiconductor saturable absorber mirrors (SESAMs) was relevant to the upper-state lifetime and the emission cross-section of the gain medium.

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    Bingyuan Zhang, Gang Li, Meng Chen, Guoju Wang, Yonggang Wang. Comparative studies of semiconductor saturable absorber mirror mode-locking dynamics in pulsed diode-end-pumped picosecond Nd:GdVO4 and Nd:YAG lasers[J]. Chinese Optics Letters, 2006, 4(6): 336

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    Paper Information

    Received: Nov. 10, 2005

    Accepted: --

    Published Online: Jun. 12, 2006

    The Author Email: Bingyuan Zhang (zhangbingyuan@sina.com.cn)

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