Chinese Optics Letters, Volume. 11, Issue 4, 041601(2013)
Nanocrystal-enhanced near-IR emission in the bismuth-doped chalcogenide glasses
Bismuth (Bi)-doped materials have attracted a great deal of attention because of their broadband nearinfrared (near-IR) emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1 100 to 1 650 nm is generated in the Bi-doped 90GeS2-10Ga2S3 glass and glass-ceramics under 820 nm of light excitation. Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi^{2-}_{2} dimers. The precipitation of \beta-GeS2 nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass.
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Yinsheng Xu, Jiani Qi, Changgui Lin, Peiqing Zhang, Shixun Dai. Nanocrystal-enhanced near-IR emission in the bismuth-doped chalcogenide glasses[J]. Chinese Optics Letters, 2013, 11(4): 041601
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Received: Oct. 24, 2012
Accepted: Nov. 16, 2012
Published Online: Mar. 12, 2013
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