In this study, a PdSe₂ nanowires (NWs) film/Si heterojunction-based near-infrared (NIR) integrated photodetector is presented. The large-area PdSe₂ NWs are synthesized via thermal-assisted selenization of pregrown Pd NWs, and the integrated photodetector with 8×8 device units is obtained by assembly and transfer of the NWs. According to optoelectrical characterization, the as-fabricated device shows visible photoresponse over a broad wavelength range of 200-1300 nm with a peak response at approximately 810 nm. The device exhibits a responsivity (R) of 166 mA·W^-1 under 810-nm light irradiation at zero bias, which increases to 3.24 A·W^-1 when applying a -2 V bias voltage. Furthermore, the integrated device exhibits excellent uniformity, and all 64 devices have a current On/Off ratio of approximately 60. Because of its high-performance uniformity, the integrated photodetector can be used as an optical image sensor to accurately record a "LASDOP" pattern projected by NIR light, indicating a promising future use.